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TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
Copyright (c) 1997, Power Innovations Limited, UK FEBRUARY 1990 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
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Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE `2310L V(Z) V 250 V(BO) V 310
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Planar Passivated Junctions Low Off-State Current < 10 A Rated for International Surge Wave Shapes
WAVE SHAPE 8/20 s 10/160 s 10/560 s 0.2/310 s 10/700 s 10/1000 s STANDARD ANSI C62.41 FCC Part 68 FCC Part 68 RLM 88 FTZ R12 VDE 0433 CCITT IX K17/K20 REA PE-60 ITSP A 150 60 45 38 50 50 50 50
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device symbol
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UL Recognized, E132482
description
The TISP2310L is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B. Transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
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INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
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TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 s (ANSI C62.41, open-circuit voltage wave shape 1.2/50 s) 10/160 s (FCC Part 68, open-circuit voltage wave shape 10/160 s) 5/200 s (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 s) 0.2/310 s (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 s) 5/310 s (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 s) 5/310 s (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 s) 10/560 s (FCC Part 68, open-circuit voltage wave shape 10/560 s) 10/1000 s (REA PE-60, open-circuit voltage wave shape 10/1000 s) Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2) Initial rate of rise of on-state current, Junction temperature Operating free - air temperature range Storage temperature range Lead temperature 1.5 mm from case for 10 s Tstg Tlead Linear current ramp, Maximum ramp value < 38 A ITSM diT/dt TJ ITSP 150 60 50 38 50 50 45 50 10 250 150 0 to 70 -40 to +150 260 A rms A/s C C C C A SYMBOL VALUE UNIT
NOTES: 1. Above 70C, derate linearly to zero at 150C case temperature 2. This value applies when the initial case temperature is at (or below) 70C. The surge may be repeated after the device has returned to thermal equilibrium. 3. Most PTT's quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting loaded current waveform is specified. .
electrical characteristics for the A and B terminals, TJ = 25C
PARAMETER VZ ID Coff NOTE Reference zener voltage Off-state leakage current Off-state capacitance IZ = 1mA VD = 50 V VD = 0 f = 1 kHz (see Note 4) 40 TEST CONDITIONS MIN 250 10 100 TYP MAX UNIT V A pF
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is connected to the guard terminal of the bridge.
electrical characteristics for the A and C or the B and C terminals, TJ = 25C
PARAMETER VZ VZ Reference zener voltage Temperature coefficient of reference voltage Breakover voltage Breakover current Peak on-state voltage Holding current Critical rate of rise of off-state voltage Off-state leakage current Off-state capacitance (see Notes 5 and 6) (see Note 5) IT = 5 A (see Note 5) (see Note 7) VD = 50 V VD = 0 f = 1 kHz (see Note 4) 110 (see Notes 5 and 6) 150 5 10 200 0.15 2.2 IZ = 1mA TEST CONDITIONS MIN 250 0.1 310 0.6 3 TYP MAX UNIT V %/oC V A V mA kV/s A pF
V(BO) I(BO) VTM IH dv/dt ID Coff
NOTES: 5. These parameters must be measured using pulse techniques, tw = 100 s, duty cycle 2%. 6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm (0.125 inch) from the device body. 7. Linear rate of rise, maximum voltage limited to 80 % VZ (minimum)..
PRODUCT
INFORMATION
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TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
The high level characteristics for terminals A and B are not guaranteed.
thermal characteristics
PARAMETER RJA Junction to free air thermal resistance MIN TYP MAX 100 UNIT C/W
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INFORMATION
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TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
MECHANICAL DATA
SOT-82 3-pin plastic single-in-line package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SOT-82 7,8 7,4 2,7 2,4
10,8 10,5
Exposed Heat Slug
2,54 typ 0,9 0,7 15,7 typ
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2
3 2,2 typ 1,2 typ 0,75 0,49
4,4 typ
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the heat slug.
MDXXAQ
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INFORMATION
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TISP2310L DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
FEBRUARY 1990 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
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INFORMATION
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